SILICON INKS FOR THIN FILM SOLAR CELL FORMATION, CORRESPONDING METHODS AND SOLAR CELL STRUCTURES
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United States of America Patent
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N/A
Issued Date -
May 26, 2011
app pub date -
Sep 21, 2010
filing date -
Sep 21, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z-average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion.
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Cited Art Landscape
Patent Citation Ranking
- 15 Citation Count
- H01L Class
- 45.68 % this patent is cited more than
- 14 Age