Solid-State Photodetector Pixel and Photodetecting Method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Jan 10, 2011
filing date -
Jul 26, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
First Claim
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