PROCEDURE FOR OBTAINING FILMS OF INTERMEDIATE BAND SEMICONDUCTOR MATERIALS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 5, 2011
app pub date -
Jan 27, 2009
filing date -
Feb 28, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully