Field boosted metal-oxide-semiconductor field effect transistor
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United States of America Patent
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Jul 17, 2018
Grant Date -
Apr 28, 2011
app pub date -
Jun 25, 2010
filing date -
Oct 28, 2009
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Abstract
A trench metal-oxide-semiconductor field effect transistor (TMOSFET) includes a plurality of mesas disposed between a plurality of gate regions. Each mesa includes a drift region and a body region. The width of the mesa is in the order of quantum well dimension at the interface between the gate insulator regions and the body regions The TMOSFET also includes a plurality of gate insulator regions disposed between the gate regions and the body regions, drift regions, and drain region. The thickness of the gate insulator regions between the gate regions and the drain region results in a gate-to-drain electric field in an OFF-state that is substantially lateral aiding to deplete the charge in the drift regions.
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