GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES
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United States of America Patent
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Issued Date -
Apr 14, 2011
app pub date -
Oct 8, 2009
filing date -
Oct 8, 2009
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Abandoned
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Abstract
A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness.
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