AIN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE USING THE SAME AND METHOD FOR PRODUCING THE SAME
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United States of America Patent
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Issued Date -
Apr 7, 2011
app pub date -
Mar 26, 2009
filing date -
Mar 28, 2008
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Abandoned
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Abstract
An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10.degree. to 80.degree. with respect to the C-plane (FIG. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (FIG. 1(b)).
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