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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
HEADWAY TECHNOLOGIES INC	678 S HILLVIEW DRIVE MILPITAS CA 95035

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• 2009 Application Filing Year
• H01L Class
• 14618 Applications Filed
• 11145 Patents Issued To-Date
• 76.25 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Mao, Guomin	San Jose, US	21	308
# of filed Patents : 21 Total Citations : 308

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Patent Citation Ranking

• 2 Citation Count
• H01L Class

• 3.01 % this patent is cited more than
• 14 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2011/0076,853

Novel process method for post plasma etch treatment

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Abstract

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A method of fabricating a wafer comprising MEMS devices comprises etching trenches or vias into the wafer using a deep reactive ion etching process wherein this process forms residual polymers on sidewalls of the trenches or vias. The wafer is exposed to a dry-cleaning process wherein residual polymers are removed. The dry-cleaning process comprises hot oven baking, combustion, or laser beam illumination.

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Description

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