Laser Process for Minimizing Variations in Transistor Threshold Voltages
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 24, 2011
app pub date -
Sep 18, 2009
filing date -
Sep 18, 2009
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A laser method is provided for minimizing variations in transistor threshold voltages. The method supplies a wafer with a laser-crystallized active semiconductor film having a top surface with a first surface roughness. The method laser anneals the active semiconductor film, and in response to the laser annealing, melts the top surface of the active semiconductor film. The result is a top surface with a second roughness, less than the first roughness. More explicitly, the wafer active semiconductor film is crystallized using a laser with a first fluence, and then laser annealed with a second fluence, less than the first fluence. As compared with complementary metal-oxide-semiconductor field-effect (CMOSFET) thin-film transistor (TFT) structures formed in unprocessed regions of the active semiconductor film, the TFT threshold voltage standard deviation for TFTs in laser annealed portions of the active film are 60% less for n-channel and 30% less for p-channel TFTs.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully