WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
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United States of America Patent
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Issued Date -
Mar 17, 2011
app pub date -
Sep 17, 2009
filing date -
Sep 17, 2009
priority date (Note) -
Abandoned
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Abstract
A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode complements a light emission pattern from the wavelength converting material.
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