SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 17, 2011
app pub date -
Sep 13, 2010
filing date -
Sep 16, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 μm to 100 μm inclusive, preferably 3 μm to 10 μm inclusive; when the amount of change in threshold voltage is less than or equal to 3 V, preferably less than or equal to 1.5 V in an operation temperature range of room temperature to 180° C. inclusive or −25° C. to −150° C. inclusive, a semiconductor device with stable electric characteristics can be manufactured. In particular, in a display device which is an embodiment of the semiconductor device, display unevenness due to variation in threshold voltage can be reduced.
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Patent Citation Ranking
- 33 Citation Count
- H01L Class
- 79.14 % this patent is cited more than
- 14 Age