HIGH ASPECT RATIO SILICON OXIDE ETCH
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United States of America Patent
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Issued Date -
Mar 10, 2011
app pub date -
Sep 9, 2010
filing date -
Sep 10, 2009
priority date (Note) -
Abandoned
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Abstract
I, among others. The substrate processing system may be configured to allow creation of a plasma useful for accelerating ions created in the plasma toward the substrate. The substrate may have regions of exposed silicon oxide and an overlying patterned photoresist layer which exposes narrow regions of silicon oxide. The etch process may remove the silicon oxide to a significant depth while maintaining a relatively constant width down the trench.
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