SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING FINE STRUCTURE ARRANGING SUBSTRATE, AND DISPLAY ELEMENT
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United States of America Patent
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Issued Date -
Mar 10, 2011
app pub date -
Feb 10, 2009
filing date -
Feb 14, 2008
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Abandoned
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Abstract
With reference to a direction perpendicular to a direction of forming electrodes to which a voltage can be applied, fine structures are each arranged within ±5 degrees at a substantially even interval, and a semiconductor element is formed by using the fine structures. On an insulating substrate, at least two electrodes are arranged at a predetermined interval, and there are formed one or more fine structure arranging regions, each of which is formed by a unit of the two electrodes. A semiconductor element electrode is made in contact with the plurality of the fine structures, each having two ends in contact with the two electrodes and a length in a longitudinal direction of a nano order to a micron order, and arranged within ±5 degrees with reference to the direction perpendicular to the direction of forming the electrodes.
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