III-NITRIDE LIGHT EMITTING DEVICE WITH CURVAT1JRE CONTROL LAYER
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United States of America Patent
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Issued Date -
Mar 10, 2011
app pub date -
Sep 8, 2009
filing date -
Sep 8, 2009
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Abstract
A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.
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