Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
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United States of America Patent
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Issued Date -
Mar 10, 2011
app pub date -
Aug 18, 2010
filing date -
Aug 21, 2009
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Abandoned
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Abstract
A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns.
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