DEEP TRENCH ISOLATION STRUCTURES BETWEEN HIGH VOLTAGE SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF
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United States of America Patent
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Issued Date -
Mar 3, 2011
app pub date -
Sep 2, 2009
filing date -
Sep 2, 2009
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Abandoned
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Abstract
Deep trench isolation structures between high voltage semiconductor devices and fabrication methods thereof are presented. The high voltage semiconductor device includes a semiconductor substrate, pluralities of intersecting deep trench isolation structures defining several high voltage semiconductor device regions, and an island at the center of the intersection between the two deep trench isolation structures, wherein the two intersecting deep trench isolation structures h
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