Semiconductor structure with layers having different hydrogen contents
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United States of America Patent
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Mar 22, 2016
Grant Date -
Mar 3, 2011
app pub date -
Sep 3, 2009
filing date -
Sep 3, 2009
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Abstract
A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.
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