MOS GATE POWER SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 3, 2011
app pub date -
Feb 3, 2010
filing date -
Sep 3, 2009
priority date (Note) -
Abandoned
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Abstract
A MOS-gate power semiconductor device is provided which includes: one or more P-type wells formed under one or more of a gate metal electrode and a gate bus line and electrically connected to an emitter metal electrode; and one or more N-type wells formed in the P-type well and electrically connected to one or more of the gate metal electrode and the gate bus line. According to this configuration, it is possible to suppress deterioration and/or destruction of a device due to an overcurrent.
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