METHOD FOR DEVELOPING THIN FILM FROM OXIDE OR SILICATE OF HAFNIUM NITRIDE, COORDINATION COMPOUND USED IN SAID METHOD, AND METHOD FOR PRODUCING INTEGRATED ELECTRONIC CIRCUIT

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United States of America Patent

APP PUB NO 20110049512A1
SERIAL NO

12922828

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Abstract

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; and x is an integer between 1 and 4 inclusive; then decomposing this gas phase on a heated substrate. The invention is used particularly in the field of microelectronics.

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Patent Owner(s)

Patent OwnerAddress
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEPARIS FRA
UNIVERSITE CLAUDE BERNARD LYON I43 BOULEVARD DU 11 NOVEMBRE 1918 VILLEURBANNE CEDEX 69622
INSTITUT POLYTECHNIQUE DE GRENOBLE46 AVENUE FÉLIX VIALLET GRENOBLE 38000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brize, Virginie Saint Martin d'Heres, FR 6 8
Daniele, Stéphane Meyzieu, FR 2 1
Dubourdieu, Catherine Grenoble, FR 4 4
Eleter, Mohamad Villeurbanne, FR 1 1

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