CIRCUIT DEVICE DRIVING METHOD AND CIRCUIT DEVICE
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United States of America Patent
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Issued Date -
Feb 24, 2011
app pub date -
Apr 3, 2008
filing date -
Apr 3, 2008
priority date (Note) -
Abandoned
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Abstract
A drive method for a circuit apparatus includes: a cold cathode electron-emission element; a MOS transistor in which one of a source region and a drain region is electrically connected to one electrode of the cold cathode electron-emission element; a first voltage source electrically connected to another electrode of the cold cathode electron-emission element; and a second voltage source which is electrically connected to a semiconductor well region in which the MOS transistor is formed. The drive method is provided with: an electron-emission part forming process in which a first potential signal is outputted from the first voltage source and a second potential signal, which is different from the second potential signal, is outputted from the second voltage source so that a forward current flows in a p-n junction between the semiconductor well region and the one region when an electron-emission part is formed in the cold cathode electron-emission element.
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