PLASMA ETCHING DEVICE
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United States of America Patent
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Issued Date -
Feb 24, 2011
app pub date -
Aug 11, 2010
filing date -
Aug 18, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.
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