GATE-SEPARATED TYPE FLASH MEMORY WITH SHARED WORD LINE
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United States of America Patent
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Issued Date -
Feb 17, 2011
app pub date -
May 13, 2009
filing date -
Dec 30, 2008
priority date (Note) -
Abandoned
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Abstract
A gate-separated type flash memory with a shared word line includes: a semiconductor substrate, on which a source electrode area and a drain electrode area are separately arranged; a word line, which is arranged between the source electrode area and the drain electrode area; a first storage bit unit, which is arranged between the word line and the source electrode area, and a second storage bit unit, which is arranged between the word line and the drain electrode area. The two storage bit units and word line are separated by a tunneling oxide layer. The two storage bit units respectively have a first control gate, a first floating gate and a second control gate, a second floating gate, and the two control gates are separately respectively arranged on two floating gates.
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