MEMORY
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United States of America Patent
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N/A
Issued Date -
Feb 17, 2011
app pub date -
May 13, 2009
filing date -
Jan 5, 2009
priority date (Note) -
Abandoned
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Abstract
A memory includes: a semiconductor substrate (1), a doped source area (2) and a doped drain area (3) set in the semiconductor substrate (1), and a channel area (4) set between said doped source area (2) and said doped drain area (3); a first insulating layer (5) located on the semiconductor substrate (1), a charge memory layer (6) composed of polysilicon located on said first insulating layer (5); an SiGe conducting layer (7) set in said charge memory layer (6).
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