PLASMA CHAMBER HAVING SWITCHABLE BIAS POWER AND A SWITCHABLE FREQUENCY RF MATCH NETWORK THEREFOR

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United States of America Patent

APP PUB NO 20110030900A1
SERIAL NO

12851381

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma chamber having a switchable bias frequency superimposed onto plasma source frequency and applied to the cathode. A power supplier capable of generating multiple RF bias frequencies is coupled into a match network through a switch. The match network couples one of the bias frequencies to the cathode. Another match network applied a source RF power to the cathode. One parallel connection of variable shunt capacitor and fixed capacitor are provided between ground and input of the switch and another is connected between ground and the input of the source RF match network.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO-FABRICATION EQUIPMENT INC ASIAP O BOX 309GT UGLAND HOUSES SOUTH CHURCH STREET GEORGETOWN GRAND CAYMAN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Jinyuan Shanghai, CN 17 282
Yin, Gerald Shanghai, CN 30 2373

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