Method of Passivating and Reducing Reflectance of a Photovoltaic Cell
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United States of America Patent
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Issued Date -
Feb 10, 2011
app pub date -
Aug 6, 2010
filing date -
Aug 6, 2009
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Abandoned
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Abstract
Disclosed is a method of passivating and reducing reflectance of a silicon photovoltaic cell. The method includes the step of providing a silicon wafer of a solar cell having a major surface. A passivation layer of silicon nitride is applied on at least 98 percent of the major surface through a vacuum deposition process. An index-matching film structure, different from silicon nitride, is applied on top of the passivation layer. The index matching film structure provides the majority of the antireflective property of the combination of the passivation layer and the index matching film structure.
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