PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE
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United States of America Patent
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Issued Date -
Feb 10, 2011
app pub date -
Apr 17, 2009
filing date -
Apr 18, 2008
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Abandoned
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Abstract
The photovoltaic device comprises a substrate, deposited on said substrate, a first contact layer; a second contact layer; between said first and second contact layers: a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer; a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer. The thickness of the first at least substantially intrinsic layer is between 160 nm and 400 nm, and the thickness of the second at least substantially intrinsic layer is between 1 .mu.m and 2 .mu.m.
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