Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor
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United States of America Patent
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Oct 6, 2010
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Sep 7, 2007
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Abstract
A semiconductor device includes a latch circuit which includes a first node for keeping a first potential corresponding to a data, and a second node for keeping a second potential corresponding to the same data, a diffusion layer continuously formed between the first node and the second node, and a transistor provided on the diffusion layer to isolate the first node from the second node.
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