Method of manufacturing semiconductor device, and etching apparatus
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United States of America Patent
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app pub date -
Oct 5, 2010
filing date -
May 12, 2008
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Abandoned
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Abstract
An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof.
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