METHOD FOR MANUFACTURING PHOTODIODE DEVICE
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United States of America Patent
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Issued Date -
Jan 27, 2011
app pub date -
May 21, 2010
filing date -
Jul 27, 2009
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing photodiode device includes the following steps: providing a wafer having a substrate and an epitaxy layer, the substrate having a first surface and a second surface and the epitaxy layer formed on the first surface; forming a first conductive layer on the second surface of the substrate; forming a patterned conductive layer above the epitaxy layer; and etching the patterned conductive layer by a reactive ion etching (RIE) process performed under argon gas and helium gas.
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