Low Temperature ALD of Noble Metals
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United States of America Patent
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Issued Date -
Jan 27, 2011
app pub date -
May 12, 2010
filing date -
May 15, 2009
priority date (Note) -
Abandoned
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Abstract
Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds.
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