STACK STRUCTURE AND INTEGRATED STRUCTURE OF CIS BASED SOLAR CELL
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United States of America Patent
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Issued Date -
Jan 27, 2011
app pub date -
Mar 7, 2008
filing date -
Mar 7, 2008
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Abandoned
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Abstract
In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm
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