METHOD AND EQUIPMENT FOR PRODUCING SAPPHIRE SINGLE CRYSTAL
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United States of America Patent
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Issued Date -
Jan 27, 2011
app pub date -
Jul 15, 2010
filing date -
Jul 22, 2009
priority date (Note) -
Abandoned
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Abstract
The method is capable of producing a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises the steps of: putting a seed crystal and a raw material in a crucible; setting the crucible in a cylindrical heater; heating the crucible; and producing temperature gradient in the cylindrical heater so as to sequentially crystallize a melt. The crucible is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible and that of the sapphire single crystal in a direction perpendicular to a growth axis thereof, from generating in the crucible and the sapphire single crystal, or which is capable of preventing deformation of the crucible without generating a crystal defect caused by the mutual stress in the sapphire single crystal.
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