FIELD EFFECT TRANSISTOR HAVING CHANNEL SILICON GERMANIUM
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United States of America Patent
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Issued Date -
Jan 13, 2011
app pub date -
Jul 13, 2009
filing date -
Jul 13, 2009
priority date (Note) -
Abandoned
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Abstract
Field effect transistors and methods of making field effect transistors are provided. The field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a silicon germanium layer in a trench at an upper surface of the semiconductor substrate between the shallow trench isolations; a gate feature on the silicon germanium layer; and metal silicides on the upper potions of silicon germanium layer and semiconductor substrate that are not covered by the gate feature. The silicon germanium layer has a bottom surface and a top surface having a (100) plane and side surfaces having two or more planes.
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