Group III-Nitride Semiconductor Schottky Diode and Its Fabrication Method

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United States of America Patent

APP PUB NO 20110006307A1
SERIAL NO

12828447

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Abstract

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A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.

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Patent OwnerAddress
TEKCORE CO LTDNO 18 TZU-CHUNG 3RD RD NAN-KUNG INDUSTRIAL ZONE NANTOU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Guan-Ting Chiayi City, TW 16 142
LEE, Chia-Ming Toucheng Town, TW 34 544

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