Plasma Reactor, and Method for the Production of Monocrystalline Diamond Layers
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United States of America Patent
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Issued Date -
Jan 13, 2011
app pub date -
Jun 16, 2008
filing date -
Jun 20, 2007
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Abandoned
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Abstract
A plasma reactor and a method for production on wafers over a large area of monocrystalline diamond layers. The plasma reactor includes at least two flat electrodes having surfaces orientated towards each other, the electrodes being delimited respectively by an edge; a plasma region producing a plasma between the surfaces of the electrodes with an ion saturation current density of equal to or greater than 0.001 A/cm2, wherein a gas is introduced into the plasma region; and a device supplying microwaves having at least one frequency, the microwaves radiating into the plasma region and introducing a power into the plasma region contributing to the plasma production. The ion saturation current density of equal to or greater than 0.001 A/cm2 is maintained by controlling at least one of (a) a spacing between the electrodes, (b) the power of the microwaves, and (c) the frequency of the microwaves.
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