III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
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United States of America Patent
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Issued Date -
Jan 6, 2011
app pub date -
Sep 19, 2008
filing date -
Jan 31, 2008
priority date (Note) -
Abandoned
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Abstract
The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.
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