METHOD FOR CLEANING A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Dec 30, 2010
app pub date -
Jun 21, 2010
filing date -
Jun 25, 2009
priority date (Note) -
Abandoned
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Abstract
There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.
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