METHOD TO FORM A THIN SEMICONDUCTOR LAMINA ADHERED TO A FLEXIBLE SUBSTRATE

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United States of America Patent

APP PUB NO 20100330731A1
SERIAL NO

12493195

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Abstract

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A semiconductor donor body such as a wafer is implanted with ions to form a cleave plane. The donor wafer is affixed to a polyimide receiver element, for example by applying polyimide in liquid form to the donor wafer, then curing, or by affixing the donor wafer to a preformed polyimide sheet. Annealing causes a lamina to cleave from the donor wafer at the cleave plane. The resulting adhered lamina and polyimide body are not adhered to another rigid substrate and can be jointly flexed.

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Patent Owner(s)

Patent OwnerAddress
GTAT CORPORATION243 DANIEL WEBSTER HIGHWAY MERRIMACK NH 03054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Aditya Sunnyvale, US 39 1293
Jackson, Kathy J Felton, US 12 192

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