METHOD FOR TRANSFERRING AN EPITAXIAL LAYER FROM A DONOR WAFER TO A SYSTEM WAFER APPERTAINING TO MICROSYSTEMS TECHNOLOGY
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United States of America Patent
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Issued Date -
Dec 30, 2010
app pub date -
Jul 18, 2008
filing date -
Jul 21, 2007
priority date (Note) -
Abandoned
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Abstract
For bonding a donor wafer (1) and a system wafer (9) an edge bead (3) of an epitaxial layer (2) on the donor wafer is flattened or completely removed by etching so that a reliable contact after bonding up to the edge region (5, 6) is possible. The etching mask is produced by means of a resist layer (4) as well as by means of removal of resist at the edge, free exposure and developing without a special photomask.
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