SCINTILLATOR SINGLE CRYSTAL, HEAT TREATMENT PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL, AND PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL

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United States of America Patent

APP PUB NO 20100327227A1
SERIAL NO

12822679

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Abstract

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The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following formula (1).
Gd2−(a+x+y+z)LnaLuxCeyLmzSiO5  (1)(In formula (1), Lm represents at least one element selected from among Pr, Tb and Tm, Ln represents at least one element selected from among lanthanoid elements excluding Pr, Tb and Tm, and Sc, and Y, a represents a value of at least 0 and less than 1, x represents a value of greater than 1 and less than 2, y represents a value of greater than 0 and no greater than 0.01, and z represents a value of greater than 0 and no greater than 0.01. The value of a+x+y+z is no greater than 2.)

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Patent Owner(s)

Patent OwnerAddress
OXIDE CORPORATION1747-1 MAKIHARA MUKAWA-CHO HOKUTO-SHI YAMANASHI 4080302

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurata, Yasushi Hitachinaka-shi, JP 64 744
Shimura, Naoaki Hitachinaka-shi, JP 16 202
Usui, Tatsuya Hitachi-shi, JP 14 194

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