COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCING METHOD THEREOF, AND COMPOSITION
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United States of America Patent
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Aug 31, 2010
filing date -
Apr 30, 2004
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Abstract
In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
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