Spin torque transfer MRAM design with low switching current
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United States of America Patent
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Issued Date -
Dec 16, 2010
app pub date -
Jun 15, 2009
filing date -
Jun 15, 2009
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Abandoned
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Abstract
The invention discloses a method to store digital information through use of spin torque transfer in a device that has a very low critical current. This is achieved by adding a spin filtering layer whose direction of magnetization is fixed to be parallel to the device's pinned layer.
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