CLUSTER E-BEAM LITHOGRAPHY SYSTEM

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United States of America Patent

SERIAL NO

12855538

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Abstract

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A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster E-beam lithography system for expose pattern area where features is sub 32 nm

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Patent Owner(s)

Patent OwnerAddress
HERMES-MICROVISION INCHSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Archie Hsinchu County, TW 1 2

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