Shorten Temperature Recovery Time of Low Temperature Ion Implantation
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United States of America Patent
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Issued Date -
Dec 2, 2010
app pub date -
May 26, 2009
filing date -
May 26, 2009
priority date (Note) -
Abandoned
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Abstract
The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.
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