RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE
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United States of America Patent
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Issued Date -
Nov 18, 2010
app pub date -
Sep 18, 2008
filing date -
Sep 20, 2007
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Abandoned
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Abstract
There is provided a resist underlayer film which does not intermix with a photoresist coated and formed as the overlying layer and which dissolves in an alkaline developer and can be developed and removed at the same time as the photoresist; and a resist underlayer film-forming composition for forming such a resist underlayer film. A resist underlayer film-forming composition for use in a lithographic process for manufacturing a semiconductor device, containing: (A) a branched polyhydroxystyrene in which an ethylene repeating unit on a polyhydroxystyrene moiety is bonded to a benzene ring on a different polyhydroxystyrene moiety; (B) a compound having at least two vinyl ether groups; and (C) a photoacid generator.
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