SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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app pub date -
Jul 21, 2009
filing date -
May 15, 2009
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Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, at least a doped region, an electrical contact layer and a metal oxide semiconductor cell. The semiconductor substrate includes opposing first and second surfaces and at least a trench extending from the second surface into interior portion thereof. The doped region is located in the semiconductor substrate under the bottom of the trench. The dopant concentration of the doped region is higher than that of the semiconductor substrate. The electrical contact layer is located on the second surface of the semiconductor substrate and connects to the doped region. The metal oxide semiconductor cell is located on the semiconductor substrate adjacent the first surface thereof.
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