III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 18, 2010
app pub date -
Dec 31, 2008
filing date -
Dec 31, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully