Growth Method of Non-Polarized-Plane InN
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United States of America Patent
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Issued Date -
Nov 18, 2010
app pub date -
Mar 28, 2010
filing date -
May 13, 2009
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Abandoned
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Abstract
A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O.sub.2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in In.sub.xGa.sub.1-xN. The invention synthetically grows m-plane InN and In-rich m-plane InGaN using LiA1O.sub.2 (100) as substrate which will be disposed and the buffer by MOCVD. And the non-polarized-plane InN would be produced through choosing appropriate substrate and the technique condition of growth as well as using the design of buffer by MOCVD.
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