PRODUCTION OF ADJUSTMENT STRUCTURES FOR A STRUCTURED LAYER DEPOSITION ON A MICROSYSTEM TECHNOLOGY WAFER

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United States of America Patent

APP PUB NO 20100282165A1
SERIAL NO

12664582

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Abstract

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The invention relates to a method for selective material deposition for sensitive structures in micro systems technology for producing mechanical adjustment structures (6, 5) for a vapour penetration mask (8), the adjustment structures on the component disc (7) and the mask being created using the same structuring method. Complementary adjustment structures can be produced thereon with a very high degree of precision. KOH etching in silicon can be used in order to create equally inclined flanks (2, 2a) in a depression and a complementary protrusion.

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Patent Owner(s)

Patent OwnerAddress
X-FAX SEMICONDUCTOR FOUNDRIES AGHAARBERGSTR 67 ERFURT 99097

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Knechtel, Roy Geraberg, DE 14 54

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