COMBINED OPTICAL METROLOGY TECHNIQUES
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United States of America Patent
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app pub date -
Jul 13, 2010
filing date -
Apr 9, 2007
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Abandoned
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Abstract
A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-θ stage to further reduce the footprint.
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