SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 4, 2010
app pub date -
May 4, 2009
filing date -
May 4, 2009
priority date (Note) -
Abandoned
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Abstract
A semiconductor device is provided. A substrate is provided. A buried layer is formed in the substrate. The buried layer comprises an insulating region. A deep trench contact structure is formed in the substrate. The deep trench contact structure comprises a conductive material and a liner layer formed on a side wall of the conductive material. The conductive material is electrically connected with the substrate.
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